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Reliability characteristics of high-K gate dielectrics HfO₂ in metal-oxide semiconductor capacitorsDEDONG HAN; JINFENG KANG; CHANGHAI LIN et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 643-647, issn 0167-9317, 5 p.Conference Paper

Chemical structures and electrical properties of atomic layer deposited HfO₂ thin films grown at an extremely low temperature (≤100°C) using O₃ as an oxygen sourceJEONG HWAN KIM; TAE JOO PARK; SEONG KEUN KIM et al.Applied surface science. 2014, Vol 292, pp 852-856, issn 0169-4332, 5 p.Article

The effect of La₂O₃-incorporation in HfO₂ dielectrics on Ge substrate by atomic layer depositionOH, Il-Kwon; KIM, Min-Kyu; MAENG, W. J et al.Applied surface science. 2013, Vol 287, pp 349-354, issn 0169-4332, 6 p.Article

Electrical properties improvement of high-k HfO₂ films by combination of C₄F₈ dual-frequency capacitively coupled plasmas treatment with thermal annealingZHANG, H. Y; YE, C; WU, X. M et al.Applied surface science. 2014, Vol 311, pp 117-123, issn 0169-4332, 7 p.Article

Impact of Ni Concentration on the Performance of Ni Silicide/HfO₂/TiN Resistive RAM (RRAM) CellsCHEN, Z. X; FANG, Z; WANG, Y et al.Journal of electronic materials. 2014, Vol 43, Num 11, pp 4193-4198, issn 0361-5235, 6 p.Article

Metal carbide-induced negative flatband voltage shift in TaC_x and HfC_x/HfO₂ gate stacksMIZUBAYASHI, Wataru; AKIYAMA, Koji; WENWU WANG et al.Applied surface science. 2008, Vol 254, Num 19, pp 6123-6126, issn 0169-4332, 4 p.Conference Paper

Oxygen-related defects in amorphous HfO₂ gate dielectricsKANETA, C; YAMASAKI, T.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2370-2373, issn 0167-9317, 4 p.Conference Paper

Band bending and band alignment at HfO₂/HfSi_xO_y/Si interfacesWEIJIE SONG; YOSHITAKE, Michiko; RUIQIN TAN et al.Applied surface science. 2007, Vol 253, Num 7, pp 3508-3511, issn 0169-4332, 4 p.Article

Resistive switching in HfO₂-based atomic layer deposition grown metal-insulator-metal structuresJANCOVIC, Peter; HUDEC, Boris; DOBROCKA, Edmund et al.Applied surface science. 2014, Vol 312, pp 112-116, issn 0169-4332, 5 p.Article

Interface characterization and current conduction in HfO₂-gated MOS capacitorsCHEN, H. W; CHIU, F. C; LIU, C. H et al.Applied surface science. 2008, Vol 254, Num 19, pp 6112-6115, issn 0169-4332, 4 p.Conference Paper

EPR study of defects in as-received, γ-irradiated and annealed monoclinic HfO₂ powderWRIGHT, Sandra; FEENEY, S; BARKLIE, R. C et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2378-2381, issn 0167-9317, 4 p.Conference Paper

Characterization of HfO₂ dielectric films with low energy SIMSJIANG, Z. X; KIM, K; LERMA, J et al.Applied surface science. 2006, Vol 252, Num 19, pp 7172-7175, issn 0169-4332, 4 p.Conference Paper

Impacts of Au-doping on the performance of Cu/HfO₂/Pt RRAM devicesTINGTING TAN; TINGTING GUO; XI CHEN et al.Applied surface science. 2014, Vol 317, pp 982-985, issn 0169-4332, 4 p.Article

PHOTODISSOCIATION DE L'EAU SENSIBILISEE AVEC HFO₂KUZNETSOV VN; LISACHENKO AA; VILESOV FI et al.1972; KINET. I KATALIZ; S.S.S.R.; DA. 1972; VOL. 13; NO 4; PP. 1082-1084; BIBL. 6 REF.Serial Issue

Mixed amide-malonate compound of hafnium as a novel monomeric precursor for MOCVD of HfO₂ thin filmsMILANOV, A; BHAKTA, R; THOMAS, R et al.Journal of material chemistry. 2006, Vol 16, Num 5, pp 437-440, issn 0959-9428, 4 p.Article

Formation and disruption of conductive filaments in a HfO₂/TiN structureBRIVIO, S; TALLARIDA, G; CIANCI, E et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 38, issn 0957-4484, 385705.1-385705.7Article

The relation between the electron energy loss spectra of hafnia and its dielectric functionVOS, Maarten; GRANDE, Pedro Luis.Surface science. 2014, Vol 630, pp 1-8, issn 0039-6028, 8 p.Article

Enhanced d₃₃ value in HfO₂-modified (Ba_0.98Ca_0.02)(Ti_0.94Sn_0.06)O₃ ceramicsJIAGANG WU; TAO WANG; XIAOJING CHENG et al.Journal of alloys and compounds. 2013, Vol 576, pp 299-301, issn 0925-8388, 3 p.Article

Improved interfacial and electrical properties of atomic layer deposition HfO₂ films on Ge with La₂0₃ passivationLI, Xue-Fei; LIU, Xiao-Jie; CAO, Yan-Qiang et al.Applied surface science. 2013, Vol 264, pp 783-786, issn 0169-4332, 4 p.Article

IR study of fundamental chemical reactions in atomic layer deposition of HfO₂ with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vaporHIROSE, F; KINOSHITA, Y; KANOMATA, K et al.Applied surface science. 2012, Vol 258, Num 19, pp 7726-7731, issn 0169-4332, 6 p.Article

Study on electrical characteristics and reliability of fluorinated HfO₂ for HKMGLEE, J. C; KIM, Y. P; ZULKARNAIN et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1417-1420, issn 0167-9317, 4 p.Conference Paper

Studies of the phosphorescence of polycrystalline hafniaPEJAKOVIC, Dušan A.Journal of luminescence. 2010, Vol 130, Num 6, pp 1048-1054, issn 0022-2313, 7 p.Article

Reliability degradation of thin HfO₂/SiO₂ gate stacks by remote RF hydrogen and deuterium plasma treatmentEFTHYMIOU, E; BERNARDINI, S; ZHANG, J. F et al.Thin solid films. 2008, Vol 517, Num 1, pp 207-208, issn 0040-6090, 2 p.Conference Paper

Effect of SiO₂ protective layer on the femtosecond laser-induced damage of HfO₂/SiO₂ multilayer high-reflective coatingsLEI YUAN; YUANAN ZHAO; CONGJUAN WANG et al.Applied surface science. 2007, Vol 253, Num 7, pp 3450-3454, issn 0169-4332, 5 p.Article